BYW51200 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES - STMicroelectronics
IRF640 - N - CHANNEL 200V - 0.150ohm - 18A TO-220/ TO-220FP MESH OVERLAY] MOSFET - IR
2SC3909 C3909 NPN POWER TRANSISTOR - SANKEN
TIP132 - POWER TRANSISTORS ( 8.0A, 60-100V, 70W) - ST
BUZ50A - SIPMOS Power Transistor ( N channel Enhancement mode) - INFINEON Semiconductor Group
BUT11A - High Voltage Power Switching Applications - Fairchild Semiconductor
2SK897 K897 - N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK1279 K1279 TRANSISTOR - N-channel MOS-FET - Fuji Electric
STW14NC50 W14NC50 14NC50 - N-CHANNEL 500V - 0.31W - 14A TO-247 PowerMesh II MOSFET - STMicroelectronics
2SC2098 C2098 - SILICON NPN EPITAXIAL PLANAR - Toshiba Semiconductor
IRFP460 - N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET - IR
2SK1277 K1277 - N-Channel MOS-FET( 250V, 0.12Ohm, 30A, 150W) - Fuji Electric
2SC3694 C3694 - Silicon NPN Power Transistors - NEC
2SK1358 K1358 - FET, Silicon N Channel MOS Type( for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver) - Toshiba Semiconductor
BUP307 - IGBT With Antiparallel Diode ( Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) - Siemens Semiconductor Group