BU408 - POWER TRANSISTORS ( 7A, 150-200V, 60W)
2SK1278 K1278 TRANSISTOR - N-channel MOS-FET - Fuji Electric
SPW17N80C3 17N80C3 - CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/ dt rated - Infineon Technologies AG
S2512NH 800V V[ drm] Max., 25A I[ T] Max. Silicon Controlled Rectifier. ST
2SC2078 C2078 - 27MHz RF Power Amp Applications - Sanyo Semicon Device
2SK2057 K2057 - Field Effect Transistor Silicon N Channel MOS Type - Toshiba Semiconductor
2SK1938 K1938 TRANSISTOR - Power MOSFET - Fuji Electric
G4C50W IRG4PC50WPBF - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier
HGTG20N60C3D - 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode - Fairchild Semiconductor
2SK1518 - Silicon N Channel MOS FET - HITACHI
2SK644, Toshiba, Silicon N-Channel MOS Type
K30N60HS - High Speed IGBT with Diode - INFINEON
2SK4115 - Switching Regulator Applications - Toshiba Semiconductor
2SK1204 - SILICON N-CHANNEL MOS FET - Hitachi Metals, Ltd
MOSFET N-Channel, Metal Oxide, 75V, Current - Continuous Drain ( Id) @ 25Â ° C 10A, Rds On ( Max) @ Id, Vgs 10.5 mOhm @ 30A, 10V