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Result 1606-1620 of 3685
BU408 POWER TRANSISTORS  Sep. 5, 2014 3:31:23

BU408 - POWER TRANSISTORS ( 7A, 150-200V, 60W)

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  • 2SK1278 K1278  Sep. 5, 2014 3:30:59

    2SK1278 K1278 TRANSISTOR - N-channel MOS-FET - Fuji Electric

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  • SPW17N80C3 17N80C3  Sep. 5, 2014 3:30:34

    SPW17N80C3 17N80C3 - CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/ dt rated - Infineon Technologies AG

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  • S2512NH  Sep. 5, 2014 3:30:06

    S2512NH 800V V[ drm] Max., 25A I[ T] Max. Silicon Controlled Rectifier. ST

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  • 2SC2078 C2078  Sep. 5, 2014 3:29:45

    2SC2078 C2078 - 27MHz RF Power Amp Applications - Sanyo Semicon Device

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  • 2SK2057 K2057  Sep. 5, 2014 3:29:28

    2SK2057 K2057 - Field Effect Transistor Silicon N Channel MOS Type - Toshiba Semiconductor

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  • 2SK1938 K1938  Sep. 5, 2014 3:29:08

    2SK1938 K1938 TRANSISTOR - Power MOSFET - Fuji Electric

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  • G4C50W IRG4PC50WPBF  Sep. 5, 2014 3:28:50

    G4C50W IRG4PC50WPBF - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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  • HGTG20N60C3D 20N60C3D 20N60C 20N60  Sep. 5, 2014 3:28:33

    HGTG20N60C3D - 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode - Fairchild Semiconductor

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  • 2SK1518 K1518  Sep. 5, 2014 3:28:16

    2SK1518 - Silicon N Channel MOS FET - HITACHI

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  • 2SK644 K644  Sep. 5, 2014 3:28:00

    2SK644, Toshiba, Silicon N-Channel MOS Type

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  • K30N60HS 30N60  Sep. 5, 2014 3:27:26

    K30N60HS - High Speed IGBT with Diode - INFINEON

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  • 2SK4115 K4115  Sep. 5, 2014 3:27:09

    2SK4115 - Switching Regulator Applications - Toshiba Semiconductor

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  • 2SK1204 K1204  Sep. 5, 2014 3:26:50

    2SK1204 - SILICON N-CHANNEL MOS FET - Hitachi Metals, Ltd

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  • AOT470 T470  Sep. 5, 2014 3:26:28

    MOSFET N-Channel, Metal Oxide, 75V, Current - Continuous Drain ( Id) @ 25Â ° C 10A, Rds On ( Max) @ Id, Vgs 10.5 mOhm @ 30A, 10V

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